Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-Source Voltage: | 30 V | Gate-Source Voltage: | ±20 V |
|---|---|---|---|
| Drain Current: | ±7.5 A | Operating And Storage Temperature Range: | -65 To 150 °C |
| Thermal Resistance, Junction-to-Ambien: | 42 °C/W | Thermal Resistance, Junction-to-Case: | 12 °C/W |
| High Light: | diode rectifier circuit,signal schottky diode |
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Features
♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V
♦High density cell design for extremely low RDS(ON)
♦High power and current handling capability in a widely used surface mount package.
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Symbol | Parameter | NDT456P | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ±20 | V |
| TJ ,TSTG | Operating and Storage Temperature Range | 65 to 150 | °C |
| RqJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | °C/W |
| RqJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | °C/W |
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