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FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

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FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

: Large Image : FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	FDS6975

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Drain-Source Voltage:	-30 V	Gate-Source Voltage:	±20 V
Drain Current - Continuous:	-6 A	Power Dissipation For Dual Operation:	2 W
Operating And Storage Temperature:	-55 To 150 °C	Thermal Resistance, Junction-to-Ambient:	78 °C/W
High Light:	multi emitter transistor , silicon power transistors

FDS6975 Dual P-Channel, Logic Level, PowerTrench^TM MOSFET

General Description

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• -6 A, -30 V. R_DS(ON) = 0.032 W @ V_GS = -10 V,

R_DS(ON) = 0.045 W @ V_GS = -4.5 V.

• Low gate charge (14.5nC typical).

• High performance trench technology for extremely low R_DS(ON).

• High power and current handling capability.

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

Absolute Maximum Ratings T_A = 25℃ unless otherwise noted

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-6	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	-20	A
P_D	Power Dissipation for Dual Operation	2	W
	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	1.6
		1
		0.9
T_J,T_STG	Operating and Storage Temperature Range	-55 to 150	°C

THERMAL CHARACTERISTICS

R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	78	°C/W
R_θJC	Thermal Resistance, Junction-to-Case (Note 1)	40	°C/W

Notes:

1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

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