Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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MT46V16M16P-5B:M Electronic IC Chips DOUBLE DATA RATE DDR SDRAM

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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MT46V16M16P-5B:M Electronic IC Chips DOUBLE DATA RATE DDR SDRAM

China MT46V16M16P-5B:M Electronic IC Chips DOUBLE DATA RATE DDR SDRAM supplier

Large Image :  MT46V16M16P-5B:M Electronic IC Chips DOUBLE DATA RATE DDR SDRAM

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: MT46V16M16P-5B:M

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 30000pcs
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Detailed Product Description
VDD Supply Voltage Relative To VSS: –1V To +3.6V VDDQ Supply Voltage Relative To VSS: –1V To +3.6V
VREF And Inputs Voltage Relative To VSS: –1V To +3.6V I/O Pins Voltage Relative To VSS: –0.5V To VDDQ + 0.5V
Storage Temperature (plastic): –55 To +150 °C Short Circuit Output Current: 50 MA
High Light:

electronic integrated circuit

,

linear integrated circuits

 

256Mb: x4, x8, x16 DDR SDRAM Features

 

Double Data Rate (DDR) SDRAM

MT46V64M4 – 16 Meg x 4 x 4 banks

MT46V32M8 – 8 Meg x 8 x 4 banks

MT46V16M16 – 4 Meg x 16 x 4 banks

 

Features

• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

• Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two – one per byte)

• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle

 

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; centeraligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

 

• Data mask (DM) for masking write data (x16 has two – one per byte)

• Programmable burst lengths (BL): 2, 4, or 8

• Auto refresh

  – 64ms, 8192-cycle(Commercial & Industrial)

  – 16ms, 8192-cycle (Automotive)

 

• Self refresh (not available on AT devices)

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2-compatible)

• Concurrent auto precharge option supported

• t RAS lockout supported (t RAP = t RCD)

 

Options                                                                               Marking

• Configuration

  – 64 Meg x 4 (16 Meg x 4 x 4 banks)                                      64M4

  – 32 Meg x 8 (8 Meg x 8 x 4 banks)                                        32M8

  – 16 Meg x 16 (4 Meg x 16 x 4 banks)                                   16M16

• Plastic package– OCPL

  – 66-pin TSOP                                                                          TG

  – 66-pin TSOP (Pb-free)                                                            P

 

• Plastic package

  – 60-ball FBGA (8mm x 14mm)                                                  FG1

   – 60-ball FBGA (8mm x 14mm) (Pb-free)                                   BG1

  – 60-ball FBGA (8mm x 12.5mm)                                                CV2

  – 60-ball FBGA (8mm x 12.5mm) (Pb-free)                                 CY2

 

• Timing – cycle time

  – 5ns @ CL = 3 (DDR400B)                                                      -5B

  – 6ns @ CL = 2.5 (DDR333) FBGA only                                    -6

  – 6ns @ CL = 2.5 (DDR333) TSOP only                                   -6T

  – 7.5ns @ CL = 2 (DDR266)                                                   -75E1

  – 7.5ns @ CL = 2 (DDR266A)                                                 -75Z1

  – 7.5ns @ CL = 2.5 (DDR266B)                                               -751

 

• Self refresh

  – Standard                                                                               None

  – Low-power self refresh                                                             L

• Temperature rating

  – Commercial (0°C to +70°C)                                                  None

  – Industrial (–40°C to +85°C)                                                    IT

  – Automotive (–40°C to +105°C)                                               AT4

 

• Revision

  – x4, x8                                                                                    :G3

  – x16                                                                                        :F3

  – x4, x8, x16                                                                             :K


 

Notes:

1. Only available on Revision F and G.

2. Only available on Revision K.

3. Not recommended for new designs.

4. Contact Micron for availability.

 

Absolute Maximum Ratings

Parameter Min Max Units
VDD supply voltage relative to VSS –1V +3.6V V
VDDQ supply voltage relative to VSS –1V +3.6V V
VREF and inputs voltage relative to VSS –1V +3.6V V
I/O pins voltage relative to VSS –0.5V VDDQ + 0.5V V
Storage temperature (plastic) –55 +150 °C
Short circuit output current 50 mA

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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