MT29F32G08CBACAWP-ITZ:C Electronic IC Chips NAND Flash Memory

32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features

NAND Flash Memory

MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant¹

• Multiple-level cell (MLC) technology

• Organization

  – Page size x8: 4320 bytes (4096 + 224 bytes)

  – Block size: 256 pages (1024K + 56K bytes)

  – Plane size: 2 planes x 2048 blocks per plane

  – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks

• Synchronous I/O performance

  – Up to synchronous timing mode 5

  – Clock rate: 10ns (DDR)

  – Read/write throughput per pin: 200 MT/s

• Asynchronous I/O performance

  – Up to asynchronous timing mode 5

  – ^tRC/^tWC: 20ns (MIN)

• Array performance

  – Read page: 50µs (MAX)

  – Program page: 1300µs (TYP)

  – Erase block: 3ms (TYP)

• Operating Voltage Range

  – V_CC: 2.7–3.6V

  – V_CCQ: 1.7–1.95V, 2.7–3.6V

• Command set: ONFI NAND Flash Protocol

• Advanced Command Set

  – Program cache

  – Read cache sequential

  – Read cache random

  – One-time programmable (OTP) mode

  – Multi-plane commands

  – Multi-LUN operations

  – Read unique ID

  – Copyback

• First block (block address 00h) is valid when shipped from factory.

  For minimum required ECC, see Error Management (page 101).

• RESET (FFh) required as first command after poweron

• Operation status byte provides software method for detecting

  – Operation completion

  – Pass/fail condition

  – Write-protect status

• Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface

• Copyback operations supported within the plane from which data is read

• Quality and reliability

  – Data retention: 10 years

  – Endurance: 3000 PROGRAM/ERASE cycles

• Operating temperature:

  – Commercial: 0°C to +70°C

  – Industrial (IT): –40ºC to +85ºC

• Package

  – 52-pad LGA

  – 48-pin TSOP

  – 100-ball BGA

Note: 1. The ONFI 2.2 specification is available at www.onfi.org.

General Description

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

This Micron NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). For further details, see Device and Array Organization.

Absolute Maximum Ratings by Device

Note: 1. Voltage on any pin relative to V_SS.

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