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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

: Large Image : TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	TK10P60W

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Drain-source Voltage:	600 V	Gate-source Voltage:	±30 V
Drain Current (DC):	9.7 A	Drain Current (pulsed):	38.8 A
Power Dissipation:	80 W	Single-pulse Avalanche Energy:	121 MJ
High Light:	multi emitter transistor , silicon power transistors

MOSFETs Silicon N-Channel MOS (DTMOS)

TK10P60W

Applications

• Switching Voltage Regulators

Features

(1) Low drain-source on-resistance: R_DS(ON) = 0.327 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 0.5 mA)

Packaging and Internal Circuit

TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)

Characteristics	Symbol	Rating	Unit
Drain-source voltage	V_DSS	600	V
Gate-source voltage	V_GSS	±30	V
Drain current (DC) (Note 1)	I_D	9.7	A
Drain current (pulsed) (Note 1)	I_DP	38.8	A
Power dissipation (Tc = 25℃)	P_D	80	W
Single-pulse avalanche energy (Note 2)	E_AS	121	mJ
Avalanche current	I_AR	2.5	A
Reverse drain current (DC) (Note 1)	I_DR	9.7	A
Reverse drain current (pulsed) (Note 1)	I_DRP	38.8	A
Channel temperature	Tch	150	℃
Storage temperature	Tstg	-55 to 150	℃

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note

1: Ensure that the channel temperature does not exceed 150℃. Note

2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

SKCH28/06	389	SEMIKRON	15+	MODULE
SKD30/12A1	635	SEMIKRON	14+	MODULE
SKD62/16	638	SEMIKRON	13+	MODULE
SKDH116/16-L100	287	SEMIKRON	16+	MODULE
SKDH116/16-L75	383	SEMIKRON	13+	MODULE
SKHI22AH4R	317	SEMIKRON	13+	MODULE
SKIIP13NAB065V1	458	SEMIKRON	14+	MODULE
SKIIP22NAB12T18	278	SEMIKRON	16+	MODULE
SKIIP23NAB126V1	290	SEMIKRON	14+	MODULE
SKIIP24NAB063T12	293	SEMIKRON	13+	MODULE
SKIIP25AC125V10	302	SEMIKRON	16+	MODULE
SKIIP32NAB12T1	608	SEMIKRON	14+	MODULE
SKIIP39ANB16V1	227	SEMIKRON	13+	MODULE
SKIIP82AC12IT1	251	SEMIKRON	16+	MODULE
SKIIP82AHB15T1	260	SEMIKRON	16+	MODULE
SKIIP83AC128IST1	224	SEMIKRON	14+	MODULE
SKKD100/16	503	SEMIKRON	16+	MODULE
SKKD162/16	434	SEMIKRON	13+	MODULE
SKKD46/12	659	SEMIKRON	16+	MODULE
SKKE81/12E	515	SEMIKRON	14+	MODULE
SKKH106/16E	200	SEMIKRON	16+	MODULE
SKKH57/16E	719	SEMIKRON	16+	MODULE
SKKT162/16E	425	SEMIKRON	16+	MODULE
SKKT162/18E	392	SEMIKRON	16+	MODULE
SKKT210/12E	326	SEMIKRON	16+	MODULE
SKKT250/14E	329	SEMIKRON	16+	MODULE
SKKT330/16E	296	SEMIKRON	16+	MODULE
SKKT430/16E	254	SEMIKRON	15+	MODULE
SKKT500/18E	236	SEMIKRON	16+	MODULE
SKKT57/14E	590	SEMIKRON	16+	MODULE