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P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

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P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

: Large Image : P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	P3NK90ZFP

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7000pcs

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Detailed Product Description

Drain-source Voltage:	900 V	Drain-gate Voltage:	900 V
Gate- Source Voltage:	± 30 V	Gate Source ESD:	4000 V
Peak Diode Recovery Voltage Slope:	4.5 V/ns	Operating Junction Temperature:	-55 To 150 °C
High Light:	multi emitter transistor , silicon power transistors

STP3NK90Z - STP3NK90ZFP

STD3NK90Z - STD3NK90Z-1

N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™Power MOSFET

• TYPICAL R_DS(on) = 4.1 Ω

• EXTREMELY HIGH dv/dt CAPABILITY

• 100% AVALANCHE TESTED

• GATE CHARGE MINIMIZED

• VERY LOW INTRINSIC CAPACITANCES

• VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

• HIGH CURRENT, HIGH SPEED SWITCHING

• IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

• LIGHTING

P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value			Unit
Symbol	Parameter	STP3NK90Z	STP3NK90ZFP	STD3NK90Z STD3NK90Z-1	Unit
V_DS	Drain-source Voltage (V_GS = 0)	900			V
V_DGR	Drain-gate Voltage (R_GS = 20 kΩ)	900			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuous) at T_C = 25°C	3	3 (*)	3	A
I_D	Drain Current (continuous) at T_C = 100°C	1.89	1.89 (*)	1.89	A
I_DM (•)	Drain Current (pulsed)	12	12 (*)	12	A
P_TOT	Total Dissipation at T_C = 25°C	90	25	90	W
	Derating Factor	0.72	0.2	0.72	W/°C
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150			°C

(•) Pulse width limited by safe operating area

(1) I_SD ≤3A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, Tj ≤ T_JMAX.

(*) Limited only by maximum temperature allowed

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