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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

: Large Image : ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	ISL9V3040S3ST

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Collector To Emitter Breakdown Voltage:	430 V	Gate To Emitter Voltage Continuous:	±10 V
Operating Junction Temperature:	-40 To 175 °C	Storage Junction Temperature:	-40 To 175 °C
Max Lead Temp For Soldering (Package Body For 10s):	260 °C	Electrostatic Discharge Voltage At 100pF, 1500Ω:	4 KV
High Light:	multi emitter transistor , silicon power transistors

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

EcoSPARK^TM 300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49362

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at TJ = 25℃

• Logic Level Gate Drive

Device Maximum Ratings T_A = 25°C unless otherwise noted

Symbol	Parameter	Ratings	Units
BV_CER	Collector to Emitter Breakdown Voltage (I_C = 1 mA)	430	V
BV_ECS	Emitter to Collector Voltage - Reverse Battery Condition (I_C = 10 mA)	24	V
E_SCIS25	At Starting T_J = 25°C, I_SCIS = 14.2A, L = 3.0 mHy	300	mJ
E_SCIS150	At Starting T_J = 150°C, I_SCIS = 10.6A, L = 3.0 mHy	170	mJ
I_C25	Collector Current Continuous, At T_C = 25°C, See Fig 9	21	A
I_C110	Collector Current Continuous, At T_C = 110°C, See Fig 9	17	A
V_GEM	Gate to Emitter Voltage Continuous	±10	V
P_D	Power Dissipation Total T_C = 25°C	150	W
	Power Dissipation Derating T_C > 25°C	1.0	W/°C
T_J	Operating Junction Temperature Range	-40 to 175	°C
T_STG	Storage Junction Temperature Range	-40 to 175	°C
T_L	Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)	300	°C
Tpkg	Max Lead Temp for Soldering (Package Body for 10s)	260	°C
ESD	Electrostatic Discharge Voltage at 100pF, 1500Ω	4	kV

Package Symbol

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

SGB15N60HS	14664		14+	TO-263
SPB20N60S5	12954		12+	TO-263
TLE4271-2G	13546		06+	TO-263
T2P50E	11024	ON	16+	TO-263
RJP30H2ADPE-00-J3	16680	RENESAS	15+	TO-263
SI8050JD	37152	SANKEN	13+	TO-263
SI-8050SD	8028	SANKEN	13+	TO-263
STB20NM50T4	2057	ST	12+	TO-263
STB30NF10T4	22440	ST	11+	TO-263
STGB7NC60HDT4	6436	ST	16+	TO-263
STPS20L45CG	10688	ST	16+	TO-263
STTH3002CG	11196	ST	15+	TO-263
T1235-800G-TR	16188	ST	05+	TO-263
T1635-700G-TR	15872	ST	10+	TO-263
T1635-800G-TR	11480	ST	16+	TO-263
T835H-6G-TR	17672	ST	11+	TO-263
TLE4271G	12806	INFIENON	16+	TO-263
SPB21N50C3	8860		16+	TO-263
TOP244R-TL	16428	POWER	16+	TO-263
STB140NF75T4	18152	ST	13+	TO-263
STB180N55F3	18716	ST	16+	TO-263
STPS30L30CG	8124	ST	13+	TO-263
STPS30L60CW	30036	ST	04+	TO-263
TOP244FN	16330	POWER	15+	TO-262
TLE4270D	8006		16+	TO-252-5
RFD14N05LSM	15566	FAIRCHILD	16+	TO-252
RFD16N05LSM	12150	FAIRCHILD	10+	TO-252
RFD3055LESM9A	7934	FAIRCHILD	16+	TO-252
TJ3965GRS-1.2	7788	HTC	16+	TO-252
SPD03N60C3	13272		11+	TO-252