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IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

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IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

: Large Image : IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRF640NPBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7900pcs

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Detailed Product Description

Pulsed Drain Current:	72 A	Power Dissipation:	150 W
Linear Derating Factor:	1.0 W/°C	Gate-to-Source Voltage:	± 20 V
Single Pulse Avalanche Energy:	247 MJ	Avalanche Current:	18 A
High Light:	power mosfet ic , silicon power transistors

IRF640NPbF

IRF640NSPbF

IRF640NLPbF

HEXFET® Power MOSFET

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead-Free

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF640NL) is available for lowprofile application.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	18	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	13	A
I_DM	Pulsed Drain Current	72	A
P_D @T_C = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	247	mJ
I_AR	Avalanche Current	18	A
E_AR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	8.1	V/ns
T_J, T_STG	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbfïin (1.1Nïm)

IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

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TDA1517ATW/N	15756	NXP	06+	TSSOP-20
SP3203ECY-L/TR	29196	SIPEX	07+	TSSOP-20
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STM8S003F3P6	13580	ST	14+	TSSOP-20
STM8S003F3P6TR	13558	ST	16+	TSSOP-20
STM8S103F3P6TR	2016	ST	16+	TSSOP-20
UDA1334ATS/N2	33744	NXP	16+	TSSOP-16
SC2440TETRT	15316	SEMTECH	08+	TSSOP-16
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