Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

China STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory supplier

Large Image :  STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory

Product Details:

Place of Origin: CHINA
Brand Name: ST
Certification: Original Factory Pack
Model Number: STW34NM60ND

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiation
Packaging Details: TUBE
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 74100PCS
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Detailed Product Description
Temperature Range: –65°C To +175°C Payment Term: T/T, Paypal, Western Union
Voltage: 14V Current: 7A
Package: TO-220 Factory Package: TUBE
High Light:

power mosfet ic

,

multi emitter transistor

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET

(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

 

Features

 

Order codes VDSS @TJ max. RDS(on) max. ID

STB34NM60ND

STF34NM60ND

STP34NM60ND

STW34NM60ND

650V 0.110 Ω 29A

 

■ The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche capabilities

 

DESCRIPTION

 

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters

 

ABSOLUTE MAXIMUM RATINGS(1)
IF(AV) 12 A
VRRM 600 V
IRM (typ) 7 A
Tj 175°C
VF (typ) 1.4 V
trr (max) 25 ns

 
PART OF STOCK

TRANS. FDS9435A 1500 FSC 15+ SOP-8
DIODO MMBD4148,215 300000 NXP 15+ SOT23-3
C.I L7805CD2T-TR 2500 ST 14+ D2PAK
FDS6990A 1500 FSC 15+ SOP-8
NDS9952A 1500 FSC 15+ SOP-8
SN65HVD485EDR 1500 TI 16+ SOP-8
SMBJ8.5CA 7500 VISHAY 16+ SMB
PIC24FJ16GA004-I/PT 1500 MICROCHIP 13+ TQFP-44
C.I TLC072CDGNR 5000 TI 05+ MSOP-8
C.I SN74LS374N 2000 TI 15+ DIP-20
TRANS. BC817-16LT1G 300000 ON 12+ SOT-23
C.I TL074CN 1000 TI 12+ DIP-14
OPTOACOPLADOR MOC3063SM 20000 FSC 14+ SOP-6
TRIAC BT151-500R 300000 NXP 16+ TO-220
C.I MM74HC164MX 25000 FSC 05+ SOP-14
C.I WS79L05 100000 WS 16+ TO-92
RES RL1206FR-070R75L 100000 YAGEO 16+ SMD1206
RES RC1206FR-071R5L 500000 YAGEO 16+ SMD1206
RES RC1206FR-071R2L 500000 YAGEO 16+ SMD1206
RES RL1206FR-070R68L 1000000 YAGEO 16+ SMD1206
RES RC0402FR-0722KL 3000000 YAGEO 16+ SMD0402
RES RC0402FR-0756RL 2000000 YAGEO 16+ SMD0402
RES RC0402FR-0724RL 2000000 YAGEO 16+ SMD0402
RES RC1206JR-072ML 500000 YAGEO 16+ SMD1206
CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE 600000 SAMSUNG 16+ SMD1206

 STW34NM60ND Power Mosfet Transistor Integrated Circuit Chip Program Memory
 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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