Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsPower Mosfet Transistor

PMBT3906 Power Mosfet Transistor PNP switching transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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PMBT3906 Power Mosfet Transistor PNP switching transistor

China PMBT3906 Power Mosfet Transistor PNP switching transistor supplier

Large Image :  PMBT3906 Power Mosfet Transistor PNP switching transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: PMBT3906

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7900pcs
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Detailed Product Description
Collector-base Voltage: −40 V Collector-emitter Voltage: −40 V
Emitter-base Voltage: −6 V Collector Current: −200 MA
Peak Collector Current: −200 MA Storage Temperature: −65 To +150 °C
High Light:

multi emitter transistor

,

silicon power transistors

 

PMBT3906 PNP switching transistor

 

General description

PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBT3904.

 

Features and benefits „

Collector-emitter voltage VCEO = −40 V „

Collector current capability IC = −200 mA

 

Applications „

General amplification and switching

 

Quick reference data

Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −40 V
IC collector current   - - −200 V

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6 V
IC collector current   - -200 mA
ICM peak collector current   - -200 mA
IBM peak base current   - -100 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Tstg storage temperature   -65 +150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

 

Package outline SOT23 (TO-236AB)

PMBT3906 Power Mosfet Transistor PNP switching transistor

 

 

 

 

Stock Offer (Hot Sell)

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MCF51QE128CLK 2655 FREESCALE 13+ QFP80
MCF51QE64CLH 4628 FREESCALE 12+ QFP
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MCF5271CAB100 904 FREESCALE 13+ QFP160
MCIMX287CVM4B 3064 FREESCALE 15+ BGA

 

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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