Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

BCP56-16 Power Mosfet Transistor NPN medium power transistors

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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BCP56-16 Power Mosfet Transistor NPN medium power transistors

China BCP56-16 Power Mosfet Transistor NPN medium power transistors supplier

Large Image :  BCP56-16 Power Mosfet Transistor NPN medium power transistors

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: BCP56-16

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 9200pcs
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Detailed Product Description
Collector-base Voltage: 100 V Collector-emitter Voltage: 80 V
Emitter-base Voltage: 5 V Collector Current (DC): 1 A
Peak Collector Current: 1.5 A Junction Temperature: 150 °C
High Light:

multi emitter transistor

,

silicon power transistors

 

BCP54; BCP55; BCP56

NPN medium power transistors

 

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V).

 

APPLICATIONS

• Switching.

 

DESCRIPTION

NPN medium power transistor in a SOT223 plastic package.

PNP complements: BCP51, BCP52 and BCP53.

 

PINNING

PIN DESCRIPTION
1 base
2,4 collector
3 emitter

 

BCP56-16 Power Mosfet Transistor NPN medium power transistors

 

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage

BCP54

BCP55

BCP56

open emitter

 

 

45

60

100

V
VCEO

collector-emitter voltage

BCP54

BCP55

BCP56

open base
 

 

45

60

80

V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 1 A
ICM peak collector current   - 1.5 A
IBM peak base current   - 0.2 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 - 1.33 W
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C

Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

 

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 4 leads                    SOT223

BCP56-16 Power Mosfet Transistor NPN medium power transistors

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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