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MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors

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MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors

: Large Image : MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	MMBTA42LT1G

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7600pcs

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Detailed Product Description

Collector−Emitter Voltage:	300 Vdc	Collector−Base Voltage:	300 Vdc
Emitter−Base Voltage:	6.0 Vdc	Collector Current (Continuous):	500 MAdc
Junction And Storage Temperature:	−55 To +150 °C	Package:	SOT−23
High Light:	multi emitter transistor , silicon power transistors

MMBTA42LT1G, MMBTA43LT1G

High Voltage Transistors

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Characteristic	Symbol	Value	Unit
Collector−Emitter Voltage MMBTA42 MMBTA43	V_CEO	300 200	Vdc
Collector−Base Voltage MMBTA42 MMBTA43	V_CBO	300 200	Vdc
Emitter−Base Voltage MMBTA42 MMBTA43	V_EBO	6.0 6.0	Vdc
Collector Current − Continuous	I_C	500	mAdc

THERMAL CHARACTERISTICS

Characteristic	Symbol	Value	Unit
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C	P_D	225 1.8	mW mW/°C
Thermal Resistance, Junction−to−Ambient	R_θJA	556	°C/W
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C	P_D	300 2.4	mW mW/°C
Thermal Resistance, Junction−to−Ambient	R_θJA	417	°C/W
Junction and Storage Temperature	T_J, Tstg	−55 to +150	°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

MMBTA42LT1G Power Mosfet Transistor NPN Silicon High Voltage Transistors

Stock Offer (Hot Sell)

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LT1013DIDR	7843	TI	16+	SOP-8
LT1072CN8	8677	LT	13+	DIP-8
LT1085CT-12	4387	LT	16+	TO-220
LT1117CST	1387	LINEAR	15+	SOT223
LT1373CS8	4358	LT	13+	SOP-8
LT1460GIZ-5	3179	LT	16+	TO-92
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LT1764AEQ-1.5#PBF	4513	LINEAR	14+	TO-263
LT1764AEQ-1.8#TRPBF	2400	LT	09+	TO263-5
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LT1931ES5#TRPBF	4368	LINEAR	16+	SOT23-5