MT29F4G08ABADAWP-D Program Ic Chip Color TV Ic Memory Flash Chip Rectifier Diode

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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FEATURES:

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks

• Asynchronous I/O performance

– tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs 3

– Program page: 200µs (TYP: 1.8V, 3.3V)3

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode4

– Read page cache mode 4

– One-time programmable (OTP) mode

– Two-plane commands 4

– Interleaved die (LUN) operations

– Read unique ID – Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for detecting

– Operation completion – Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

• WP# signal: Write protect entire device

• First block (block address 00h) is valid when shipped from factory with ECC.

For minimum required ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

• RESET (FFh) required as first command after power-on

• Alternate method of device initialization (Nand_Init) after power up (contact factory)

• Internal data move operations supported within the plane from which data is read

• Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package – 48-pin TSOP type 1, CPL2

– 63-ball VFBGA