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MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet

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MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet

: Large Image : MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	MGP20N40CL

Payment & Shipping Terms:

Minimum Order Quantity:	50pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

Contact Now

Detailed Product Description

IC:	20 Adc	ICR:	12 Apk
PD:	150 Watts	ESD:	3.5 KV
TJ, Tstg:	–55 To 175 °C
High Light:	multi emitter transistor , silicon power transistors

MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet

MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors

• Low Saturation Voltage

• High Pulsed Current Capability

TYPICAL ELECTRICAL CHARACTERISTICS

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