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SPW47N60CFD Power Mosfet Transistor high voltage power mosfet

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SPW47N60CFD Power Mosfet Transistor high voltage power mosfet

: Large Image : SPW47N60CFD Power Mosfet Transistor high voltage power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	SPW47N60CFD

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8500pcs

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Detailed Product Description

Drain-source Breakdown Voltage:	600 V	Avalanche Breakdown Voltage:	700 V
Gate Threshold Voltage:	4 V	Gate-source Leakage Current:	100 NA
Gate Resistance:	0.62 Ω	Input Capacitance:	7700 PF
Output Capacitance:	2200 PF	Reverse Transfer Capacitance:	77 PF
High Light:	power mosfet ic , multi emitter transistor

SPW47N60CFD CoolMOS^TM Power Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv /dt rated

• High peak current capability

• Periodic avalanche rated

• Qualified according to JEDEC¹⁾ for target applications

• Pb-free lead plating; RoHS compliant

Product Summary

V_DS	600	V
R_DS(on),max	0.083	Ω
I_D	46	A

Maximum ratings, at Tj =25 °C, unless otherwise specified

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C T_C=100 °C	46 29	A
Pulsed drain current¹⁾	I_D,pulse	T_C=25 °C	115	A
Avalanche energy, single pulse	E_AS	I_D=10 A, V_DD=50 V	1800	mJ
Avalanche energy, repetitive t_AR ^2),3)	E_AR	I_D=20 A, V_DD=50 V	1	mJ
Avalanche current, repetitive t_AR ^2),3)	I_AR		20	A
Drain source voltage slope	dv /dt	I_D=46 A, V_DS=480 V, T_j =125 °C	80	V/ns
Reverse diode dv /dt	dv /dt	I_S=46 A, V_DS=480 V, T_j =125 °C	40	V/ns
Maximum diode commutation speed	di /dt	I_S=46 A, V_DS=480 V, T_j =125 °C	600	A/µs
Gate source voltage	V_GS	static AC (f >1 Hz)	±20 ±30	V
Power dissipation	P_tot	T_C=25 °C	417	W
Operating and storage temperature	Tj , Tstg		-55 ... 150	°C

1) J-STD20 and JESD22

2) Pulse width t_p limited by T_j,max

3) Repetitive avalanche causes additional power losses that can be calculated as P_AV=E_AR*f

SPW47N60CFD Power Mosfet Transistor high voltage power mosfet

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

TJLC-001LA1	9120	ST	15+	RJ45
RJK03B7DPA-0G-J7A	8620	RENESAS	16+	RENESAS
RJP30E4DPE	7860	RENESAS	16+	RENESAS
UPS161	1450	AU	10+	QFP80
S1D13705F00A200	857	EPSON	16+	QFP80
TDA9586H/N3/3/1809	1301	NXP	07+	QFP80
TDA9555H/N1/3I1098	1205	PHI	05+	QFP80
UPSD3354D-40U6	365	ST	16+	QFP80
SD4002	992	AUK	16+	QFP64
TLE6244X	2200		1026+	QFP64
STLC5046BCL	2345	ST	16+	QFP64
STM32F100RBT6B	2498	ST	15+	QFP64
STM32F103KBT6	2501	ST	14+	QFP64
STM32F373RCT6	968	ST	14+	QFP64
STR711FR1T6	1352	ST	16+	QFP64
STR755FR2T6	1247	ST	14+	QFP64
STV0297D	2980	ST	06+	QFP64
UE06AB6	1724	ST	16+	QFP64
PT6311B	21936	PTC	16+	QFP52
R5F21256SNFP	1310	RENESAS	10+	QFP52
SL811HST-AXC	1820	CYPRESS	16+	QFP48
VNC1L-1A	749	FTDI	13+	QFP48
UPD720114GA-YEU-A	15504	NEC	16+	QFP48
TDA8007BHL/C3	2177	NXP	16+	QFP48
TDA8007BHL/C2	2306	PHILIPS	04+	QFP48
RTL8111DL-GR	14216	REALTEK	16+	QFP48
RTL8111DL-VB-GR	7776	REALTEK	16+	QFP48
RTL8201CL-VD-LF	17408	REALTEK	14+	QFP48
RTL8211CL	16062	REALTEK	11+	QFP48
STM32F101C8T6	3474	ST	16+	QFP48

Tag:

mosfets irf3205,

power mosfet ic,

multi emitter transistor

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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