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FGL40N120AND Mosfet Power Module complementary silicon power transistors

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FGL40N120AND Mosfet Power Module complementary silicon power transistors

: Large Image : FGL40N120AND Mosfet Power Module complementary silicon power transistors

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	FGL40N120AND

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8500pcs

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Detailed Product Description

Collector-Emitter Voltage:	1200 V	Gate-Emitter Voltage:	±25 V
Pulsed Collector Current:	120 A	Diode Maximum Forward Current:	240 A
Operating Junction Temperature:	-55 To +150 °C	Storage Temperature:	-55 To +150 °C
High Light:	low voltage power mosfet , hybrid inverter circuit

FGL40N120AND

1200V NPT IGBT

Features

• High speed switching

• Low saturation voltage : V_CE(sat)= 2.6 V @ I_C = 40A

• High input impedance

• CO-PAK, IGBT with FRD : t_rr = 75ns (typ.)

Applications

Induction Heating, UPS, AC & DC motor controls and general purpose inverters.

Description

Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

Absolute Maximum Ratings

Symbol	Parameter	FGL40N120AND	Units
V_CES	Collector-Emitter Voltage	1200	V
V_GES	Gate-Emitter Voltage	±25	V
I_C	Collector Current @T_C = 25°C	64	A
I_C	Collector Current @T_C = 100°C	40	A
I_CM(1)	Pulsed Collector Current	120	A
I_F	Diode Continuous Forward Current @T_C = 100°C	40	A
I_FM	Diode Maximum Forward Current	240	A
P_D	Maximum Power Dissipation @T_C = 25°C	500	W
P_D	Maximum Power Dissipation @T_C = 100°C	200	W
SCWT	Short Circuit Withstand Time, V_CE = 600V, V_GE = 15V, T_C = 125°C	10	µs
T_J	Operating Junction Temperature	-55 to +150	°C
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds	300	°C

Notes: (1) Pulse width limited by max. junction temperature

FGL40N120AND Mosfet Power Module complementary silicon power transistors

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Part No.

Quantity

Brand

D/C

Package

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ETC1.6-4-2-3TR	4563	M/A-COM	15+	SMD
EX5418-EG11	7577	EETI	13+	QFN
EXC7900-SG11	4967	EETI	13+	QFN
EXCCET103U	9515	PANASONIC	16+	SMD
EZ80190AZ050SG	2645	ZILOG	05+	QFP
F2405S-1WR2	4629	MORNSUN	16+	SIP
F65550B	1918	CHIPS	13+	QFP
FA5518N-A2-TE1	9586	FUJITSU	14+	SOP-8
FAN1112DX	20504	FAIRCHILD	16+	TO-252
FAN3225TMPX	3081	FAIRCHILD	16+	DFN-8
FAN3225TMX	5365	FAIRCHILD	13+	SOP-8
FAN6862TY	13420	FAIRCHILD	16+	SSOT-6
FAN9612MX	7548	FAIRCHILD	12+	SOP-8
FC-135 32.7680KA	4093	EPSON	13+	SMD
FCB11N60TM	12339	FAIRCHILD	15+	TO-263
FCX495TA	46000	ZETEX	14+	SOT-89
FDB3632	8071	FAIRCHILD	14+	TO-263
FDC6330L	7527	FAIRCHILD	04+	SOT-163
FDC6420C	20575	FAIRCHILD	14+	SOT-163
FDD4141	9286	FAIRCHILD	16+	TO-252
FDD850N10L	20646	FAIRCHILD	11+	TO-252
FDH055N15A	7591	FAIRCHILD	15+	TO-247
FDL100N50F	3233	FAIRCHILD	13+	TO-264
FDLL4148	25000	FAIRCHILD	15+	LL34
FDMS3604S	5436	FAIRCHILD	16+	QFN
FDMS86500L	8142	FAIRCHILD	13+	QFN-8
FDMS86520L	7901	FAIRCHILD	15+	QFN
FDMS8672S	6190	FAIRCHILD	16+	QFN-8
FDMS8692	20717	FAIRCHILD	16+	QFN