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NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

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NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

: Large Image : NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

Product Details:

Place of Origin:	Japan
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	NJW0302G

Payment & Shipping Terms:

Minimum Order Quantity:	50pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VCEO:	250 Vdc	VCBO:	250 Vdc
VEBO:	5.0 Vdc	VCEX:	250 Vdc
IC:	15 30 Adc
High Light:	multi emitter transistor , silicon power transistors

Complementary NPN-PNP Power Bipolar Transistors

NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.

Features

•Exceptional Safe Operating Area

•NPN/PNP Gain Matching within 10% from 50 mA to 3 A

•Excellent Gain Linearity

•High BVCEO

•High Frequency

•These are Pb-Free Devices Bene

Benefits

•Reliable Performance at Higher Powers

•Symmetrical Characteristics in Complementary Configurations •Accurate Reproduction of Input Signal

•Greater Dynamic Range

•High Amplifier Bandwith App

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	250	Vdc
Collector-Base Voltage	VCBO	250	Vdc
Emitter-Base Voltage	VEBO	5.0	Vdc
Collector-Emitter Voltage - 1.5 V	VCEX	250	Vdc