Home Products Power Mosfet Transistor

STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

: Large Image : STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	STGB7NC60HDT4

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7800pcs

Contact Now

Detailed Product Description

Collector-Emitter Voltage:	600 V	Emitter-Collector Voltage:	20 V
Gate-Emitter Voltage:	±20 V	Collector Current (pulsed):	50 A
Diode RMS Forward Current At TC = 25°C:	20 A	Storage Temperature:	– 55 To 150 °C
Operating Junction Temperature:	– 55 To 150 °C	Total Dissipation At TC = 25°C:	80 W
High Light:	power mosfet ic , multi emitter transistor

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

DS1245Y-100	1002	DALLAS	15+	TO-92
DS1990A-F5	1002	MAXIM	16+	CAN
ICL7135CPIZ	1002	INTERSIL	16+	DIP
IRFP150NPBF	5000	IR	14+	TO-247
IRFP260NPBF	5000	IR	14+	TO-247
K847P	1002	VISHAY	14+	DIP16
LM301AN	1002	NS	16+	DIP8
LM35DT	1002	NS	16+	TO-220
MC34074AP	1002	ON	13+	DIP14
TC962CPA	1002	MICROCHIP	15+	DIP8
VB125ASP	1002	STM	16+	SOP-10
LT1084CT-12	1005	LT	16+	TO220
XC2C64A-7VQG44C	1005	XILINX	14+	QFP44
30344	560	BOSCH	14+	QFP
AT93C66A-10SQ-2.7	1008	ATMEL	14+	SOP8
NCP1200AP40	1008	ON	16+	DIP8
PCA82C250T/N4,118	3000	NXP	16+	SOP8
ADM5120PX-AB-T-2	1009		13+	QFP208
TDA8950J	1011	NXP	15+	ZIP23
HT8950	1012	HOLTEK	16+	DIP
TDA7384	1012	ST	16+	ZIP
CS5550-ISZ	1022	CIRRUS	14+	SSOP24
LF412CN	1022	NS	14+	DIP8
IR21141SSPBF	1031	IR	14+	SSOP24
XCF04SVOG20C	1034	XILINX	16+	SOP
MC34084P	1050	ON	16+	DIP-14
DAC1220E	1077	TI	13+	SSOP16
AT91SAM7X256-AU	1088	ATMEL	15+	QFP
74LVX4245MTCX	1100	FSC	16+	TSSOP
ADM2582EBRWZ	1100	AD	16+	SOP-20

STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

■ LOWER ON-VOLTAGE DROP (V_cesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER C_RES/C_IES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		STGP7NC60HD STGB7NC60HD	STGF7NC60HD
V_CES	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ECR	Emitter-Collector Voltage	20		V
V_GE	Gate-Emitter Voltage	±20		V
I_C	Collector Current (continuous) at T_C = 25°C (#)	25	10	A
I_C	Collector Current (continuous) at T_C = 100°C (#)	14	6	A
I_CM (1)	Collector Current (pulsed)	50		A
I_F	Diode RMS Forward Current at T_C = 25°C	20		A
P_TOT	Total Dissipation at T_C = 25°C	80	25	W
	Derating Factor	0.64	0.20	W/°C
V_ISO	Insulation Withstand Voltage A.C. (t = 1 sec; T_c = 25°C)	-	2500	V
Tstg	Storage Temperature	– 55 to 150		°C
Tj	Operating Junction Temperature	– 55 to 150		°C