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Dual 30 Volt Power Trench MOSFET high power transistors FDS4935BZ

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Dual 30 Volt Power Trench MOSFET high power transistors FDS4935BZ

: Large Image : Dual 30 Volt Power Trench MOSFET high power transistors FDS4935BZ

Product Details:

Place of Origin:	Original
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FDS4935BZ

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

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Detailed Product Description

Drain-Source Voltage:	–30 V	Gate-Source Voltage:	+25 V
Drain Current – Continuous:	–6.9 A	Operating And Storage Junction Temperature Range:	–55 To +150 QC
Thermal Resistance, Junction-to-Ambient:	78 QC/W
High Light:	power mosfet ic , silicon power transistors

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FDS4935BZ

Dual 30 Volt P-Channel PowerTrench MOSFET

Dual 30 Volt Power Trench MOSFET high power transistors FDS4935BZ Features

x –6.9 A, –30 V. RDS(ON) = 22 m:

@ VGS = –10 V RDS(ON) = 35 m:

@ VGS = – 4.5 V

x Extended VGSS range (–25V) for battery applications

x ESD protection diode (note 3)

x High performance trench technology for extremely low RDS(ON)

x High power and current handling capability

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Dual 30 Volt Power Trench MOSFET high power transistors FDS4935BZ

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Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859