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FQP50N06 Power Mosfet Transistor npn general purpose transistor

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NPN General Purpose Transistor

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FQP50N06 Power Mosfet Transistor npn general purpose transistor

Large Image : FQP50N06 Power Mosfet Transistor npn general purpose transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	FQP50N06

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7800pcs

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Detailed Product Description

Drain-Source Voltage:	60 V	Gate-Source Voltage:	± 20 V
Single Pulsed Avalanche Energy:	990 MJ	Avalanche Current:	52.4 A
Repetitive Avalanche Energy:	12.1 MJ	Peak Diode Recovery Dv/dt:	7.0 V/ns
High Light:	power mosfet ic , silicon power transistors

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

SN74HC00DR	4211	TI	15+	SOP14
NDS9956A	4215	FAIRCHILD	16+	SOP8
MC33202DR2G	4227	ON	16+	SOP8
ICE2B265	4250		14+	DIP-8
SS32-E3/57T	4250	VISHAY	14+	DO214
SI3867	4258	VISHAY	14+	SOT-163
APM4953	4275	APM	16+	SOP8
LM1117MPX-5.0	4288	NS	16+	SOT223
3224W-1-103E	4300	BOURNS	13+	SMD
TNY276GN	4300	POWER	15+	SOP-7
MIC5235-1.8YM5	4300	MICREL	16+	SOT23-5
HCF4052BEY	4399	ST	16+	DIP
M82C51A-2	4400	OKI	14+	DIP
MUR1620CTRG	4400	ON	14+	TO-220
IRF7329	4412	IR	14+	SOP-8
HSMP-3816	4433	AVAGO	16+	SOT153
SMDJ54CA	4440	LITTELFUS	16+	SMD
GP1A51HR	4444	SHARP	13+	DIP-4
P2804BDG	4444	NIKO	15+	TO252
AP9962GH	4450	AP	16+	TO-252
AD1955ARSZ	4457	AD	16+	SSOP-28
AMS1083CT-3.3	4470	AMS	14+	TO-220
1N4747A	4500	ST	14+	DO-41
FDB8447L	4500	FSC	14+	TO-263
INA118P	4500	TI	16+	DIP-8
IRFR9024NTRPBF	4500	IR	16+	TO-252
NL17SZ06	4500	ON	13+	SOT553
Q6040K7	4500	LITTELFUS	15+	TO-3P
STM8324	4500	SAMHOP	16+	SOP8
TDA2050	4500	ST	16+	ZIP

FQP50N06L

60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 52.4A, 60V, R_DS(on) = 0.021Ω @V_GS = 10 V

• Low gate charge ( typical 24.5 nC)

• Low Crss ( typical 90 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings T_C = 25°C unless otherwise noted

Symbol	Parameter	FQP50N06L	Units
V_DSS	Drain-Source Voltage	60	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	52.4	A
I_D		37.1	A
I_DM	Drain Current - Pulsed (Note 1)	210	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	990	mJ
I_AR	Avalanche Current (Note 1)	52.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	12.1	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	121	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.81	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C