IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics

IRLR2905TRPBF

±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount (IRLR2905)

Straight Lead (IRLU2905)

Advanced Process Technology

Fast Switching
Fully Avalanche Rated

Lead Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.



 Absolute Maxim Rating

TC = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V 30 A

IDM Pulsed Drain Current 160 PD @TC = 25°C

Power Dissipation 110 W Linear Derating Factor 0.71 W/°C

VGS Gate-to-Source Voltage ± 16 V

EAS Single Pulse Avalanche Energy 210 mJ

IAR Avalanche Current 25 A EAR Repetitive

Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

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