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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

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MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

: Large Image : MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	MMBT4403LT1G

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

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Detailed Product Description

VCEO:	−40 Vdc	VCBO:	−40 Vdc
VEBO:	−5.0 Vdc	IC:	−600 MAdc
PD:	225 MW
High Light:	power mosfet ic , multi emitter transistor

MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

High Voltage Transistors

NPN Silicon

MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors ORDERING INFORMATION

Device Order	Number Package Type	Shipping†
MMBT4403LT1	SOT−23 (Pb−Free)	3,000 / Tape & Reel
MMBT4403LT1G	SOT−23 (Pb−Free)	3,000 / Tape & Reel
MMBT4403LT3	SOT−23 (Pb−Free)	10,000 / Tape & Reel

Features

• Pb−Free Package is Available

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

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