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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

: Large Image : N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	NDD04N60ZT4G

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

Contact Now

Detailed Product Description

VDSS:	600 V	ID:	4.8- 4.1 A
IDM:	20 A	PD:	30- 83 W
VGS:	±30 V
High Light:	power mosfet ic , multi emitter transistor

N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

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