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HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

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HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

: Large Image : HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	HJ44H11

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8600pcs

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Detailed Product Description

Collector- Emitter Voltage:	80 V	Emitter-Base Voltage:	5 V
Collector Current:	8 A	Base Current:	5 A
Junction Temperature:	+150 ℃	Storage Temperature:	-55~+150 ℃
High Light:	power mosfet ic , multi emitter transistor

HJ44H11 NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION

The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others.

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETER		SYMBOL	RATINGS	UNIT
Collector- Emitter Voltage		V_CEO	80	V
Collector-Emitter Voltage		V_CES	80	V
Emitter-Base Voltage		V_EBO	5	V
Collector Current		I_C	8	A
Base Current		I_B	5	A
Power Dissipation (TC=25℃)	SOT-223	P_D	5	W
	TO-220		65	W
	TO-252		20	W
Junction Temperature		T_J	+150	℃
Storage Temperature		T_STG	-55~+150	℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

TYPICAL CHARACTERISTICS

HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

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