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NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet

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NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet

: Large Image : NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet

Product Details:

Place of Origin:	Original
Brand Name:	ONSEMI
Certification:	Original Factory Pack
Model Number:	NTR1P02LT1G

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

Contact Now

Detailed Product Description

VDSS:	−20 V	VGS:	±12 V
IDM:	−4.0 A	PD:	400 MW
High Light:	multi emitter transistor , silicon power transistors

VDSS:

−20 V

VGS:

±12 V

IDM:

−4.0 A

PD:

400 MW

High Light:

multi emitter transistor

silicon power transistors

Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package

NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Features

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Package is Available

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet

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