S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE

SCRs (1 A to 70 A)

General Description

The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are required, see “Sensitive SCRs” section of this catalog.

Three packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low-cost assembly and convenient packaging techniques.

The Teccor line of SCRs features glass-passivated junctions to ensure long-term reliability and parameter stability. Teccor’s glass offers a rugged, reliable barrier against junction contamination.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for more information.

Features

• RoHS Compliant

• Electrically-isolated package

• High voltage capability — 200 V to 1000 V

• High surge capability — up to 950 A

• Glass-passivated chip

Compak SCR

• Surface mount package — 1 A series

• New small profile three-leaded Compak package

• Packaged in embossed carrier tape with 2,500 devices per reel

• Can replace SOT-223

Specific Test Conditions

di/dt — Maximum rate-of-rise of on-state current; I_GT = 150 mA with ≤ 0.1 µs rise time

dv/dt — Critical rate of applied forward voltage

I ²t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing

I_DRM and I_RRM — Peak off-state forward and reverse current at V_DRM and V_RRM

Igt — dc gate trigger current; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices

I_GM — Peak gate current

I_H — dc holding current; gate open

I_T — Maximum on-state current

I_TSM — Peak one-cycle forward surge current

P_G(AV) — Average gate power dissipation

P_GM — Peak gate power dissipation

t_gt — Gate controlled turn-on time; gate pulse = 100 mA; minimum width = 15 µs with rise time ≤ 0.1 µs

t_q — Circuit commutated turn-off time

V_DRM and V_RRM — Repetitive peak off-state forward and reverse voltage

V_gt — DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω for 1 to 16 A devices and 30 Ω for 20 to 70 A devices

V_TM — Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.

• Operating temperature range (TJ) is -65 °C to +125 °C for TO-92 devices and -40 °C to +125 °C for all other packages.

• Storage temperature range (TS) is -65 °C to +150 °C for TO-92 devices, -40 °C to +150 °C for TO-202 and TO-220 devices, and -40 °C to +125 °C for all others.

• Lead solder temperature is a maximum of 230 °C for 10 seconds maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (TC) is measured as shown on dimensional outline drawings in the “Package Dimensions” sectionof this catalog.

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