Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

China BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor supplier

Large Image :  BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: BFG135

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 6800pcs
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Detailed Product Description
Collector-base Voltage: 25 V Collector-emitter Voltage: 15 V
Emitter-base Voltage: 2 V DC Collector Current: 150 MA
Total Power Dissipation: 1 W Storage Temperature: −65 To 150 °C
High Light:

power mosfet ic

,

multi emitter transistor

 

BFG135

NPN 7GHz wideband transistor

 

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.

 

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 25 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 2 V
IC DC collector current   - 150 mA
Ptot total power dissipation up to Ts = 145 °C (note 1) - 1 W
Tstg storage temperature   -65 155 °C
Tj junction temperature   - 175 °C

Note 1. Ts is the temperature at the soldering point of the collector tab.

 

BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

 

PINNING

PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector

 

Intermodulation distortion and second order intermodulation distortion test circuit.

BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

 

Stock Offer (Hot Sell)

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MAX660MX 4300 NSC 12+ SOP-8
MAX3238CDBR 4300 TI 15+ SSOP
BTA225-800B 4300 NXP 14+ TO-220A

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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