Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

China AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET supplier

Large Image :  AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: AP4511GD

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7800pcs
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Detailed Product Description
Total Power Dissipation: 2.0 W Linear Derating Factor: 0.016 W/℃
Storage Temperature Range: -55 To 150 ℃ Operating Junction Temperature Range: -55 To 150 ℃
Maximum Thermal Resistance, Junction-ambient: 62.5 ℃/W Drain-Source Breakdown Voltage: 35 V
High Light:

small scale integrated circuits

,

integrated components

 

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

 

▼ Low Gate ChargeAP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

▼ Fast Switching Speed

▼ PDIP-8 Package

 

N-CH    BVDSS            35V

            RDS(ON)             25mΩ

            ID                    7A

P-CH    BVDSS            -35V

            RDS(ON)         40mΩ

            ID                    -6.1A

AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

 

 

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 35 -35 V
VGS Gate-Source Voltage ±20 ±20 V
ID@TA=25℃ Continuous Drain Current3 7 -6.1 A
ID@TA=70℃ Continuous Drain Current3 5.7 -5 A
IDM Pulsed Drain Current1 30 -30 A
PD@TA=25℃ Total Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

 

Package Outline : DIP-8

AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

 

Part Marking Information & Packing : DIP-8

AP4511GD low power mosfet Power Mosfet Transistor N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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