Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

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Home ProductsPower Mosfet Transistor

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

China 2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current supplier

Large Image :  2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2SC3356-T1B

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 9000pcs
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Detailed Product Description
Collector To Base Voltage: 20 V Collector To Emitter Voltage: 12 V
Emitter To Base Voltage: 3.0 V Collector Current: 100 MA
Total Power Dissipation: 200 MW Junction Temperature: 150 °C
High Light:

power mosfet ic

,

multi emitter transistor

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

 

FEATURES

 

• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

 

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C

Note Free air

 

PACKAGE DIMENSIONS

3-PIN MINIMOLD (UNIT: mm)

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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