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BFR520 Power Mosfet Transistor NPN 9 GHz Wideband Transistor

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BFR520 Power Mosfet Transistor NPN 9 GHz Wideband Transistor

: Large Image : BFR520 Power Mosfet Transistor NPN 9 GHz Wideband Transistor

Product Details:

Place of Origin:	Original
Brand Name:	PHILIPS
Certification:	Original Factory Pack
Model Number:	BFR520

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

Collector-base Voltage:	20 V	Collector-emitter Voltage:	15 V
DC Collector Current:	70 MA	Total Power Dissipation:	300 MW
Feedback Capacitance:	0.4 PF
High Light:	multi emitter transistor , silicon power transistors

NPN 9 GHz wideband transistor BFR520

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

DESCRIPTION

The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT23 envelope

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	20	V
VCES	collector-emitter voltage	RBE = 0	−	15	V
VEBO	emitter-base voltage	open collector	−	2.5	V
C DC	collector current		−	70	mA
Ptot	total power dissipation	up to Ts = 97 °C; note 1	−	300	mW
Tstg	storage temperature		−65	150	°C