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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

: Large Image : TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

Product Details:

Place of Origin:	Original
Brand Name:	TOSHIBA
Certification:	Original Factory Pack
Model Number:	30J127

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VCES:	600 V	VGES:	±20 V
I C:	30 A	ICP:	60 A
Collector Power Dissipation (Tc = 25°C):	170 W
High Light:	multi emitter transistor , silicon power transistors

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

High Power Switching Applications

Fast Switching Applications

• The 4th generation

• Enhancement-mode

• Fast switching (FS):

Operating frequency up to 50 kHz (reference)

High speed: tf = 0.05 µs (typ.)

Low switching loss : Eon = 1.00 mJ (typ.)

: Eoff = 0.80 mJ (typ.)

• Low saturation voltage: VCE (sat) = 2.0 V (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics	Symbol	Rating	Unit
Collector-emitter voltage	V_CES	600	V
Gate-emitter voltage	V_GES	±20	V
Collector power dissipation (Tc = 25°C)	P_C	170	W
Junction temperature	T_j	150	°C
Storage temperature range	T_stg	−55 to 150	°C