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Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

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Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

: Large Image : Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SA1943

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Collector-base Voltage:	-230 V	Collector-emitter Voltage:	-230 V
Emitter-base Voltage:	-5 V	Collector Current:	-15 A
Base Current:	-1.5 A	Collector Power Dissipation:	150 W
Junction Temperature:	150℃	Storage Temperature:	-55~150 ℃
High Light:	npn smd transistor , silicon power transistors

Silicon PNP Power Transistors 2SA1943

DESCRIPTION

·With TO-3PL package Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

·Complement to type 2SC5200

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity

audio frequency amplifier output stage

PINNING

PIN	DESCRIPTION
1	Emitter
2	Collector;connected to mounting base
3	Base

CHARACTERISTICS Tj=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-50mA ;I_B=0	-230			V
V_CEsat	Collector-emitter saturation voltage	I_C=-8A I_B=-0.8A			-3.0	V
V_BE	Base-emitter voltage	I_C=-7A ; V_CE=-5V			-1.5	V
I_CBO	Collector cut-off current	V_CB=-230V; I_E=0			-5	μA
I_EBO	Emitter cut-off current	V_EB=-5V; I_C=0			-5	μA
h_FE-1	DC current gain	I_C=-1A ; V_CE=-5V	55		160
h_FE-2	DC current gain	I_C=-7A ; V_CE=-5V	35
f_T	Transition frequency	I_C=-1A ; V_CE=-5V		30		MHz
C_OB	Collector output capacitance	f=1MHz;V_CB=-10V		360		pF