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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

: Large Image : 100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

Product Details:

Place of Origin:	Thailand
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FDB3632

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

Drain To Source Voltage:	100 V	Gate To Source Voltage:	±20 V
Continuous (T 80 A C < 111oC, VGS = 10V):	80 A	Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W):	12 A
Single Pulse Avalanche Energy (Note 1):	393 MJ	Power Dissipation:	310 W
High Light:	power mosfet ic , multi emitter transistor

FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features

• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A

• Qg(tot) = 84nC (Typ.), VGS = 10V 100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101 Formerly developmental type 82784

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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