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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

: Large Image : Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SB1560

Payment & Shipping Terms:

Minimum Order Quantity:	20
Price:	Negotiation
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000

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Detailed Product Description

Package:	TO-3PN	Applications:	Audio ,regulator And General Purpose
High Light:	npn smd transistor , multi emitter transistor

Package:

TO-3PN

Applications:

Audio ,regulator And General Purpose

High Light:

npn smd transistor

multi emitter transistor

Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 , Anterwell

Darlington 2SB1560

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

**PINNING**
PIN	DESCRIPTION
1	Base
2	Collector;connected to mounting base
3	Emitter

**Absolute maximum ratings(Ta=℃)**
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	Open emitter	-160	V
V_CEO	Collector-emitter voltage	Open base	-150	V
V_EBO	Emitter-base voltage	Open collector	-5	V
I_C	Collector current		-10	A
I_B	Base current		1	A
P_C	Collector power dissipation	T_C=25℃	100	W
T_j	Junction temperature		150	℃
T_stg	Storage temperature		-55~150	℃

**CHARACTERISTICS Tj=25℃** (unless otherwise specified)
SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-30mA ;I_B=0	-150			V
V_CEsat	Collector-emitter saturation voltage	I_C=-7A ;I_B=-7mA			-2.5	V
V_BEsat	Base-emitter saturation voltage	I_C=-7A ;I_B=-7mA			-3.0	V
I_CBO	Collector cut-off current	V_CB=-160V; I_E=0			-100	μA
I_EBO	Emitter cut-off current	V_EB=-5V; I_C=0			-100	μA
h_FE	DC current gain	I_C=-7A ; V_CE=-4V	5000
C_ob	Output capacitance	I_E=0 ; V_CB=10V;f=1MHz		230		pF
f_T	Transition frequency	I_C=-2A ; V_CE=-12V		50		MHz
Switching times
t_on	Turn-on time	I_C=-7A;R_L=10Ω I_B1=- I_B2=-7mA V_CC=-70V		0.8		μs
t_s	Storage time			3.0		μs
t_f	Fall time			1.2		μs