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Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT

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Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT

: Large Image : Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT

Product Details:

Place of Origin:	Philippines
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FGA25N120ANTD

Payment & Shipping Terms:

Minimum Order Quantity:	20
Price:	Negotiate
Packaging Details:	please contact me for details
Delivery Time:	1
Payment Terms:	T/T, Western Union,Paypal
Supply Ability:	20000

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Detailed Product Description

Collector-Emitter Voltage:	1200 V	Gate-Emitter Voltage:	± 20 V
Collector Current:	50 A	Pulsed Collector Current:	90 A
Voltage:	100V	Diode Continuous Forward Current:	25 A
High Light:	multi emitter transistor , silicon power transistors

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

Original 3 Pin Transistor FGA25N120ANTD 1200V NPT Trench IGBT Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Symbol	Parameter	Typ.	Max.	Units
R_θJC	Thermal Resistance, Junction-to-Case for IGBT	--	0.4	°C/W
R_θJC	Thermal Resistance, Junction-to-Case for Diode	--	2.0	°C/W
R_θJA	RθJA Thermal Resistance, Junction-to-Ambient	--	40	°C/W