Anterwell Technology Ltd.

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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

China Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V supplier

Large Image :  Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Product Details:

Place of Origin: China
Brand Name: ALPHA
Certification: Original Factory Pack
Model Number: AO3400A

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T in advance or others, Western Union,Payapl
Supply Ability: 5200PCS
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Detailed Product Description
Shipment:: DHL, Fedex, TNT, EMS Etc Main Line:: Ic,module,transistor,diodes,capacitor,resistor Etc
Gate-Source Voltage: ±12 V Drain-Source Voltage: 30V
Temperature Range: -55 To 150 °C Temperature Range: -55 To 150 °C
Power Dissipation: 0.9 To 1.4W Power Dissipation: 0.9 To 1.4W
Continuous Drain Current: 4.7 To 5.7 A Package: SOT-23 (TO-236)
Continuous Drain Current: 4.7 To 5.7 A
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Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

 

 

AO3400A N

- Channel Enhancement Mode Field Effect Transistor

 

General Description Feature
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

 

Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V

Thermal Characteristics

 

Parameter Symbol Typ Max Unit
Maximum Junction-to-Ambient A t ≤ 10s RθJA

70

90 °C/W
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

 

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007

 

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Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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