Home Products Power Mosfet Transistor

SUM110P06-07L-E3 Transistor P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

SUM110P06-07L-E3 Transistor P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

: Large Image : SUM110P06-07L-E3 Transistor P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	SUM110P06-07L-E3

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

Contact Now

Detailed Product Description

Drain-Source Voltage:	−60 V	Gate-Source Voltage:	± 20 V
Pulsed Drain Current:	−240 A	Avalanche Current:	−75 A
Single Pulse Avalanche Energy:	281 MJ	Operating Junction And Storage Temperature:	−55 To 175 ℃
High Light:	power mosfet ic , silicon power transistors

SUM110P06-07L

P-Channel 60-V (D-S) 175℃ MOSFET

FEATURES

• TrenchFET Power MOSFET

• New Package with Low Thermal Resistance

APPLICATIONS

• Automotive

− 12-V Boardnet

− High-Side Switches

− Motor Drives

SUM110P06-07L-E3 Transistor P-Channel 60-V (D-S) 175 Degree Celcious MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C = 25℃ UNLESS OTHERWISE NOTED)

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	−60	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current ^d(T_J = 175℃)	T_C= 25℃	I_D	−110	A
Continuous Drain Current ^d(T_J = 175℃)	T_C= 125℃	I_D	−95	A
Pulsed Drain Current		I_DM	−240	A
Avalanche Current	L = 0.1 mH	I_AS	−75	A
Single Pulse Avalanche Energy^a	L = 0.1 mH	E_AS	281	mJ
Power Dissipation	T_C = 25℃	P_D	375 ^c	W
Power Dissipation	T_A = 25℃ ^b	P_D	3.75	W
Operating Junction and Storage Temperature Range		T_J, Tstg	−55 to 175	℃

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

G30N60A4	1300	FAIRCHILD	15+	TO-3P
M74HC137B1R	1300	ST	16+	DIP
MB8421-12LP	1300	FUJITSU	16+	DIP
MC33887DH	1300	FREESCAL	14+	HSOP-20
MSM6242BRS	1300	ON	14+	DIP-18
NE22	1300	IR	14+	TO-220
OPA134PA	1300	BB	16+	DIP-8
OPA2134PA	1300	BB	16+	DIP-8
TC4560BP	1300	TOS/NEC/H	13+	DIP
74HCT688N	1320	PHI	15+	DIP
DM9161AEP	1320	DAVICOM	16+	QFP
M430F149IPM	1320	TI	16+	QFP64
SN74HC645N	1320	TI	14+	DIP20
BTA26-800B	1325	ST	14+	TO-3P
LT3508EFE	1350	LINEAR	14+	TSSOP16
UM3750A	1351	UMC	16+	SOP
MC34051D	1388	ON	16+	SOP16
FQP5N50C	1400	FAIRCHILD	13+	TO-220
IRFD420	1400	IR	15+	DIP-4
MAX1693EUB+	1400	MAXIM	16+	MSOP10
TLP3063F	1400	TOSHIBA	16+	DIP
MBRF10100CT	1420	SSG	14+	TO-220
VN920B	1422	ST	14+	SMD
74HCT4538N	1431	NXP	14+	DIP
H5DU2562	1450	HYNIX	16+	TSOP
CY8C26643-24AXI	1455	CRY	16+	QFP
AO4710	1458	AOS	13+	SOP8
LH5116NA-10	1472	SHARP	15+	SOP
PAL007E	1480	PIONEER	16+	ZIP-25
UCC27424DR	1491	TI	16+	SOP-8

Tag:

mosfets irf3205,

power mosfet ic,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C