Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

SIHG20N50C Power Mosfet Transistor high voltage power mosfet

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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SIHG20N50C Power Mosfet Transistor high voltage power mosfet

China SIHG20N50C Power Mosfet Transistor high voltage power mosfet supplier

Large Image :  SIHG20N50C Power Mosfet Transistor high voltage power mosfet

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: SIHG20N50C

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8000pcs
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Detailed Product Description
Drain-Source Voltage: 500 V Gate-Source Voltage: ± 30 V
Pulsed Drain Current: 80 A Linear Derating Factor: 1.8 W/°C
Single Pulse Avalanche Energy: 361 MJ Maximum Power Dissipation: 250 W
High Light:

power mosfet ic

,

multi emitter transistor

 

SiHG20N50C

Power MOSFET

 

FEATURESSIHG20N50C Power Mosfet Transistor high voltage power mosfet

• Halogen-free According to IEC 61249-2-21 Definition

• Low Figure-of-Merit Ron x Qg

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved Trr/Qrr

• Improved Gate Charge

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

 

PRODUCT SUMMARY

VDS (V) at TJ max. 560
RDS(on) (Ω) VGS = 10 V 0.270
Qg (Max.) (nC) 76
Qgs (nC) 21
Qgd (nC) 34
Configuration Single

 

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30 V
Continuous Drain Current (TJ = 150 °C) e VGS at 10 V TC = 25 °C ID 20 A
TC = 100 °C 11
Pulsed Drain Current a IDM 80 A
Linear Derating Factor   1.8 W/°C
Single Pulse Avalanche Energy b EAS 361 mJ
Maximum Power Dissipation PD 250 W
Peak Diode Recovery dV/dt c dV/dt 5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s   300 d °C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.

c. ISD ≤ 18 A, dI/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Limited by maximum junction temperature.

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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