Home Products Power Mosfet Transistor

PMBT2907A Power Mosfet Transistor Low voltage PNP switching transistors

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

PMBT2907A Power Mosfet Transistor Low voltage PNP switching transistors

: Large Image : PMBT2907A Power Mosfet Transistor Low voltage PNP switching transistors

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	PMBT2907A

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	12000pcs

Contact Now

Detailed Product Description

Collector-base Voltage:	−60 V	Collector-emitter Voltage:	−60 V
Emitter-base Voltage:	−5 V	Collector Current (DC):	−600 MA
Peak Collector Current:	−800 MA	Peak Base Current:	−200 MA
High Light:	power mosfet ic , silicon power transistors

PMBT2907; PMBT2907A

PNP switching transistors

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

NPN complements: PMBT2222 and PMBT2222A.

MARKING

TYPE NUMBER	MARKING CODE⁽¹⁾
PMBT2907	*2B
PMBT2907A	*2F

Note

1. * = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W: Made in China.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	−	−60	V
V_CEO	emitter-base voltage PMBT2907 PMBT2907A	open base	− −	−40 −60	V V
V_EBO	emitter-base voltage	open collector	−	−5	V
I_C	collector current (DC)		−	−600	mA
I_CM	peak collector current		−	−800	mA
I_BM	peak base current		−	−200	mA
P_tot	total power dissipation	T_amb ≤ 25 °C	−	250	mW
T_stg	storage temperature		−65	+150	°C
T_j	junction temperature		−	150	°C
T_amb	operating ambient temperature		−65	+150	°C

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

DS1302ZN	30000	DALLAS	16+	SOP8
L7815CV	30000	ST	16+	TO-220
BC807-25LT1G	30000	ON	13+	SOT23
BZX84C33LT1G	30000	ON	15+	SOT-23
MBD914LT1G	30000	ON	16+	SOT23
S1GB-13	30000	DIODES	16+	SMB
TIP122	30000	ST	14+	TO220
TLP131(GB-TPL,F)	30000	TOSHIBA	14+	SOP-
UA741CN	30000	ST	14+	DIP-8
2N7002E	31010	VISHAY	16+	SOT23
W25X40BVSNIG	31250	WINBOND	16+	SOP-8
CD4051BPWR	32000	TI	13+	TSSOP
EMC5754-00VF05GRR	32000	EMP	15+	SOT23-5
RXEF185	32000	RAYCHEM	16+	DIP
SMS7630-079LF	32000	Son/Skywo	16+	SOD-523
74HC139	33211	ST	14+	SOP
1NU41	34500	TOSHIBA	14+	DO15
1N5366BRLG	35000	ON	14+
2SA1943	38000	TOSHIBA	16+	TO-3PL
KIA78L05F	38000	KEC	16+	SOT-89
BZV55-C12	40000	NXP	13+	LL34
MJD122T4G	40000	ON	15+	TO-252
P6KE6.8A	40000	VISHAY	16+	DO-15
ST7FLITE15F1M6	40000	ST	16+	SOP-20
78M05	41000	ST	14+	TO-252
EEEFK1E471P	42000	PANASONIC	14+	SMD
GRM32ER71H475KA88L	42000		14+	SMD
MBTA42LT	42000	ON	16+	SOT-23
2SB834-Y	42300	FSC	16+	TO-220
AP89042	42510	APLUS	13+	DIPSOP

Tag:

mosfets irf3205,

power mosfet ic,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C