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S1MB-13-F Power Mosfet Transistor 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

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S1MB-13-F Power Mosfet Transistor 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

: Large Image : S1MB-13-F Power Mosfet Transistor 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	S1MB-13-F

Payment & Shipping Terms:

Minimum Order Quantity:	10PCS
Price:	Negotiate
Packaging Details:	Please contact me for details
Payment Terms:	T/T, Western Union, MoneyGram Paypal
Supply Ability:	3000pcs/week

Contact Now

Detailed Product Description

High Light:	multi emitter transistor , silicon power transistors

High Light:

multi emitter transistor

silicon power transistors

S1MB-13-F 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop and High Current Capability

Surge Overload Rating to 30A Peak

Ideally Suited for Automated Assembly

Lead Free Finish/RoHS Compliant

Mechanical Data

Case: SMA/SMB

Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Lead Free Plating (Matte Tin Finish).

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Marking: Type Number, See Page 3

Ordering Information: See Page 3

SMA Weight: 0.064 grams (approximate)

SMB Weight: 0.093 grams (approximate)

A, B, D, G, J, K, M Suffix Designates SMA Package

AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package

Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic	Symbol	S1 A/AB	S1 B/BB	S1 D/DB	S1 G/GB	S1 J/JB	S1 K/KB	S1 M/MB	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	VRRM VRWM VR	50	100	200	400	600	800	1000	V
RMS Reverse Voltage	VR(RMS)	35	70	140	280	420	560	700	V
Average Rectified Output Current @ TT = 100°C	IO	1.0							A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load	IFSM	30							A
Forward Voltage @ IF = 1.0A	VFM	1.1							V
Peak Reverse Leakage Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°C	IRM	5.0 100							μA
Maximum Reverse Recovery Time (Note 4)		2.0							μs
Typical Total Capacitance (Note 1)		10							pF
Typical Thermal Resistance, Junction to Terminal (Note 2)		30							°C/W
Operating and Storage Temperature Range	Tj, TSTG	-65 to +150							°C

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Tag:

mosfets irf3205,

multi emitter transistor,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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