Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsPower Mosfet Transistor

2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor

China 2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor supplier

Large Image :  2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor

Product Details:

Place of Origin: Original
Brand Name: MCC
Certification: Original Factory Pack
Model Number: 2SB772-AZ-JM

Payment & Shipping Terms:

Minimum Order Quantity: 50pcs
Price: negotiation
Packaging Details: please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5200PCS
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Detailed Product Description
V (BR)CEO: 30Vdc V (BR)CBO: 40Vdc
V (BR)EBO: 5.0Vdc ICBO: 1.0 UAdc
ICEO: 1.0uAdc IEBO: 1.0uAdc
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multi emitter transistor

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silicon power transistors

2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor

Features
2SB772-AZ-JM PNP Silicon Plastic-Encapsulate Transistor MOS Field Effect Transistor • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS  Compliant. See ordering information)

 •  Epoxy meets UL 94 V-0 flammability rating

 • Moisure Sensitivity Level 1

 • Capable of 1.25Watts of Power Dissipation

 • Collector-current 3.0A

 • Collector-base Voltage 40V

 • Operating and storage junction temperature range: -55O C to +150O C
 

Electrical Characteristics @ 25O C Unless Otherwise Specified

Symbol Parameter Min Max Units

OFF CHARACTERISTICS

V (BR)CEO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) 30 --- Vdc
V (BR)CBO Collector-Base Breakdown Voltage (I C=100uAdc, IE=0) 40 --- Vdc
V (BR)EBO E Emitter-Base Breakdown Voltage (I E=100uAdc, IC=0) 5.0 --- Vdc
I CBO Collector Cutoff Current (V CB=40Vdc, IE=0) --- 1.0 uAdc
ICEO Collector Cutoff Current (V CE=30Vdc, IB=0) --- 1.0 uAdc
IEBO Emitter Cutoff Current (V EB=6.0Vdc, IC=0) --- 1.0 uAdc

 

ON CHARACTERISTICS

h FE(1) DC Current Gain (IC=1.0Adc, VCE=2.0Vdc) 60 400 ---
h FE(2) DC Current Gain (IC=100mAdc, VCE=2.0Vdc) 32 --- ---
V CE(sat) Collector-Emitter Saturation Voltage (I C=2.0Adc, IB=0.2Adc) --- 0.5 Vdc
V BE(sat) Base-Emitter Saturation Voltage (I C=2.0Adc, IB=0.2Adc) --- 2.0 Vdc


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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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