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IRFZ34NPBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

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IRFZ34NPBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

: Large Image : IRFZ34NPBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFZ34NPBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9000pcs

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Detailed Product Description

Pulsed Drain Current:	100 A	Power Dissipation:	68 W
Linear Derating Factor:	0.45 W/°C	Gate-to-Source Voltage:	± 20 V
Single Pulse Avalanche Energy:	65 MJ	Avalanche Current:	16 A
High Light:	power mosfet ic , multi emitter transistor

IRFZ34NPbF

HEXFET® Power MOSFET

• Advanced Process

• Technology Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ34NPBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	29	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	20	A
I_DM	Pulsed Drain Current	100	A
P_D @T_C = 25°C	Power Dissipation	68	W
	Linear Derating Factor	0.45	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	65	mJ
I_AR	Avalanche Current	16	A
E_AR	Repetitive Avalanche Energy	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

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TPS61221DCKR	4200	TI	14+	SC70-6
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GP1A52HRJ00F	4211	SHARP	16+	DIP
HCF4556BE	4211	STM	13+	DIP-16