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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

: Large Image : AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	AON7403

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000pcs

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Detailed Product Description

Drain-Source Voltage:	-30 V	Gate-Source Voltage:	±25 V
Continuous Drain Current:	-20 A	Pulsed Drain Current:	-80 A
Junction And Storage Temperature:	-55 To 150°C	Package:	8-DFN
High Light:	multi emitter transistor , silicon power transistors

AON7403 P-Channel Enhancement Mode Field Effect Transistor

General Description

The AON7403/L uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical.

-RoHS Compliant

-AON7403L is Halogen Free

Features

V_DS (V) = -30V

I_D = -8A (V_GS = -10V)

R_DS(ON) < 18mΩ (V_GS = -10V)

R_DS(ON) < 36mΩ (V_GS = -4.5V)

AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		V_DS	-30	V
Gate-Source Voltage		V_GS	±25	V
Continuous Drain Current ^B,G	T_C=25°C	I_D	-20	A
Continuous Drain Current ^B,G	T_C=100°C	I_D	-20
Pulsed Drain Current ^C		I_DM	-80
Continuous Drain Current	T_A=25°C	I_DSM	-8
Continuous Drain Current	T_A=70°C	I_DSM	-6
Power Dissipation ^B	T_C=25°C	P_D	27	W
Power Dissipation ^B	T_C=100°C	P_D	11
Power Dissipation ^A	T_A=25°C	P_DSM	1.6
Power Dissipation ^A	T_A=70°C	P_DSM	1
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	°C

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

G. The maximum current rating is limited by bond-wires.

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