Home Products Power Mosfet Transistor

2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

: Large Image : 2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2N2222A

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	20000pcs

Contact Now

Detailed Product Description

Collector-base Voltage:	75 V	Collector-emitter Voltage:	40 V
Emitter-base Voltage:	6 V	Collector Current (DC):	800 MA
Peak Collector Current:	800 MA	Operating Ambient Temperature:	−65 To +150 °C
High Light:	multi emitter transistor , silicon power transistors

NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

PIN	DESCRIPTION
1	emitter
2	base
3	collector, connected to case

2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
_VCBO	collector-base voltage 2N2222 2N2222A	open emitter	- -	60 75	V V
V_CEO	collector-emitter voltage 2N2222 2N2222A	open base	- -	30 40	V V
V_EBO	emitter-base voltage 2N2222 2N2222A	open collector	- -	5 6	V V
I_C	collector current (DC)		-	800	mA
I_CM	peak collector current		-	800	mA
I_BM	peak base current		-	200	mA
P_tot	total power dissipation	T_amb ≤ 25 °C	-	500	mW
P_tot	total power dissipation	T_case ≤ 25 °C	-	1.2	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	200	°C
T_amb	operating ambient temperature		-65	+150	°C

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

S29JL064H70TF100	500	SPANSIO	NEW	TSSOP
XC95288XL-6TQ144C	500	XILINX	NEW	QFP
XCS20XL-4PQ208C	500	XILINX	NEW	QFP
08-0579-01	500	CICSO	NEW	QFP
CY7C1041BV33L-12ZXC	500	CYRESS	NEW	TSSOP
IXFE44N60	500	IXYS	NEW	SOT227
MRF5P21240H	500	FREESCALE	NEW	NI-360
MRF9045L	500	FREESCALE	NEW	NI-360
PEF82912	500		NEW	QFP
S9050-100	500	SAGE	NEW	QFP
XC95288-15BG352I	500	XILINX	NEW	BGA
2N6081	500	MOTOROLA	NEW	NI-360
ADSP-2141LKS-N1	500	ADI	NEW	QFP
AQY414SX	500	PAN	NEW	SMD4
MIC2941AWU	50000	MICREL	NEW	TO263
MPC8260ACZUMHBB	200	FREESCALE	NEW	BGA
VNP10N06	2500	ST	NEW	TO-220
CS5532-ASZ/BSZ	2000	CIRRUS	NEW	SSOP20
M27C512-90F1	500	ST	NEW	DIP28
MPC8248CZQMIBA	100	FREESCAL	NEW	BGA
VCT6973G-B3-000	500	MICRONAS	NEW	QFP
PEB20320HV3.4	2000		NEW	QFP
TMS320C6701GJC150	300	TI	NEW	BGA

Tag:

mosfets irf3205,

multi emitter transistor,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C