Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor

China MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor supplier

Large Image :  MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: MTP16N25E

Payment & Shipping Terms:

Minimum Order Quantity: 20 pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000 pcs
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Detailed Product Description
Drain–Source Voltage: 250 Vdc Drain–Gate Voltage: 250 Vdc
Operating And Storage Temperature: –55 To 150 °C Input Capacitance: 1558 PF
Output Capacitance: 281 PF Reverse Transfer Capacitance: 130 PF
High Light:

multi emitter transistor

,

silicon power transistors

 

TMOS E–FET™ Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

 

TMOS POWER FET

16 AMPERES 250 VOLTS

RDS(on) = 0.25 OHM

 

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

 

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

 

MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor       MTP16N25E Power Mosfet Transistor TMOS E–FET Power Field Effect Transistor

 

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit
Drain–Source Voltage VDSS 250 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 250 Vdc

Gate–Source Voltage — Continuous

                                                          — Non–Repetitive (tp ≤ 10 ms)

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current — Continuous

                                      — Continuous @ 100°C

                                          — Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

16

10

56

Adc

 

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

125

1.0

Watts

W/°C

Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, IL = 16 Apk, L = 3.0 mH, RG = 25 Ω)

EAS 384 mJ

Thermal Resistance — Junction to Case

                                    — Junction to Ambient

RθJC

RθJA

1.0

62.5

°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C

 

 

 

 

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NTMS5P02R2 197 0N NEW SOP
ES5107AE 192 CYRUSTEK NEW DIP40
MD2810-D08 192 MD NEW SSOP
HPCS1335 B0 191 CORTINA NEW BGA
AN22113A 190 PANASONIC NEW QFP

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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