LF412CN IC Chip Low Offset , Low Drift Dual JFET Input Operational Amplifier

LF412

Low Offset, Low Drift Dual JFET Input Operational Amplifier

General Description

These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and guaranteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF412 dual is pin compatible with the LM1558, allowing designers to immediately upgrade the overall performance of existing designs.

These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

Features

• Internally trimmed offset voltage: 1 mV (max)

• Input offset voltage drift: 10 µV/˚C (max)

• Low input bias current: 50 pA

• Low input noise current: 0.01pA/√Hz

• Wide gain bandwidth: 3 MHz (min)

• High slew rate: 10V/µs (min)

• Low supply current: 1.8 mA/Amplifier

• High input impedance: 10¹²Ω

• Low total harmonic distortion ≤0.02%

• Low 1/f noise corner: 50 Hz

• Fast settling time to 0.01%: 2 µs

Typical Connection 

Ordering Information

LF412XYZ

X indicates electrical grade

Y indicates temperature range

   “M” for military

   “C” for commercial

Z indicates package type

   “H” or “N”

Connection Diagrams

Simplified Schematic

Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 11)

Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.

Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Note 4: Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded.

Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA.

Note 6: These devices are available in both the commercial temperature range 0˚C≤TA≤70˚C and the military temperature range −55˚C≤TA≤125˚C. The temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is limited by internal junction temperature Tj max.

Note 7: Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF412A and for VS=±15V for the LF412. VOS, IB, and IOS are measured at VCM=0.

Note 8: The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this specification.

Note 9: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj . Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj =TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.

Note 10: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS = ±6V to ±15V.

Note 11: Refer to RETS412X for LF412MH and LF412MJ military specifications.

Note 12: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside guaranteed limits.

Note 13: Human body model, 1.5 kΩ in series with 100 pF.

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