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BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

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BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

: Large Image : BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	BTA24-600BWRG

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

I² T Value For Fusing:	340 A² S	Critical Rate Of Rise Of On-state Current:	50 A/µs
Peak Gate Current:	4 A	Average Gate Power Dissipation:	1 W
Storage Junction Temperature:	- 40 To + 150°C	Operating Junction Temperature:	- 40 To + 125°C
High Light:	multi emitter transistor , silicon power transistors

BTA24, BTB24, BTA25

BTA26, BTB26, T25

25 A standard and Snubberless™ triacs

Features

■ High current triac

■ Low thermal resistance with clip bonding

■ High commutation (4 quadrant) or very high commutation (3 quadrant) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS (2002/95/EC) compliant

Applications

Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.

The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 V_RMS).

Description

Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26, BTB26 and T25 triac series is suitable for general purpose mains power AC switching.

BTA24-600BWRG power mosfet module 25 A standard and Snubberless triacs

Absolute maximum ratings

Symbol	Parameter			Value	Unit
I_T(RMS)	RMS on-state current (full sine wave)	TOP3	Tc = 105°C	25	A
		D²PAK / TO-220AB	Tc = 100°C
		RD91 Ins/ TOP3 Ins.	Tc = 100°C
		TO-220AB Ins.	Tc = 75°C
I_TSM	Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C)	F = 50 Hz	t = 20 ms	250	A
I_TSM		F = 60 Hz	t = 16.7 ms	260	A
I ² t	I ² t Value for fusing	t_p = 10 ms		340	A² s
dI/dt	Critical rate of rise of on-state current I_G = 2 x I_GT , t_r ≤ 100 ns	F = 120 Hz	T_j = 125°C	50	A/µs
V_DSM/V_RSM	Non repetitive surge peak off-state voltage	t_p = 10 ms	Tj = 25°C	V_DRM/V_RRM + 100	V
I_GM	Peak gate current	t_p = 20 µs	Tj = 125°C	4	A
P_G(AV)	Average gate power dissipation		Tj = 125°C	1	W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125	°C

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AF4502C	780	ANACHIP	14+	SOP-8
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IRF520	782	IR	14+	TO-220
IRFB4710	782	IR	16+	TO-220
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TOP414GN	800	POWER	14+	SOP-8
TDA7253	802	ST	14+	ZIP
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STPS1045D	822	ST	16+	TO-220
AP919	881	VALENCE	16+	TQFP
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AM26LV31CDR	888	TI	15+	SOP-16
EPM2210F324I5N	888	ALTERA	16+	BGA
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PT2272-M6	900	PTC	14+	DIP
RHRP30120	900	FAIRCHILD	16+	TO-220
MP4211	910	TOSHIBA	16+	NA
AD7740YRMZ	911	AD	13+	MSOP-8
FOD260L	922	FSC	15+	DIP-8
PIC16F916-I/SP	922	MICROCHIP	16+	DIP