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BTA08-600BW Power Mosfet Transistor 8A TRIACS SNUBBERLESS TRIACS

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BTA08-600BW Power Mosfet Transistor 8A TRIACS SNUBBERLESS TRIACS

: Large Image : BTA08-600BW Power Mosfet Transistor 8A TRIACS SNUBBERLESS TRIACS

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	BTA08-600BW

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

RMS On-state Current (full Sine Wave):	8 A	I² T Value For Fusing:	36 A² S
Critical Rate Of Rise Of On-state Current:	50 A/µs	Peak Gate Current:	4 A
Average Gate Power Dissipation:	1 W	Storage Junction Temperature:	- 40 To + 150°C
High Light:	multi emitter transistor , silicon power transistors

BTA/BTB08 and T8 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD

8A TRIACS

MAIN FEATURES:

Symbol	Value	Unit
I_T(RMS)	8	A
V_DRM/V_RRM	600 and 800	V
I_{GT (Q1)}	5 to 50	mA

DESCRIPTION

Available either in through-hole or surface-mount packages, the BTA/BTB08 and T8 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...

The snubberless versions (BTA/BTB...W and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)

BTA08-600BW Power Mosfet Transistor 8A TRIACS SNUBBERLESS TRIACS

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter			Value	Unit
I_T(RMS)	RMS on-state current (full sine wave)	DPAK / D² PAK IPAK / TO-220AB	Tc = 110°C	8	A
I_T(RMS)	RMS on-state current (full sine wave)	TO-220AB Ins.	Tc = 100°C	8	A
I_TSM	Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C)	F = 50 Hz	t = 20 ms	80	A
I_TSM		F = 60 Hz	t = 16.7 ms	84	A
I ² t	I² t Value for fusing	tp = 10 ms		36	A² s
dI/dt	Critical rate of rise of on-state current I_G = 2 x I_GT , tr ≤ 100 ns	F = 120 Hz	Tj = 125°C	50	A/µs
I_GM	Peak gate current	tp = 20 µs	Tj = 125°C	4	A
P_G(AV)	Average gate power dissipation		Tj = 125°C	1	W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125	°C

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