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STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

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STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

: Large Image : STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	STF21NM50N

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9500pcs

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Detailed Product Description

Drain-source Voltage:	500 V	Drain-gate Voltage:	500 V
Gate- Source Voltage:	±25 V	Drain Current (pulsed):	72 A
Peak Diode Recovery Voltage Slope:	15 V/ns	Max. Operating Junction Temperature:	150 °C
High Light:	power mosfet ic , multi emitter transistor

STP21NM50N-STF21NM50N-STW21NM50N

STB21NM50N - STB21NM50N-1

N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET

General Features

STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

APPLICATIONS

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

Absolute Maximum ratings

Symbol	Parameter	Value		Unit
		TO-220 / D²PAK / I²PAK / TO-247	TO-220FP
V_DS	Drain-source Voltage (V_GS = 0)	500		V
V_DGR	Drain-gate Voltage (R_GS = 20 kΩ)	500		V
V_GS	Gate- source Voltage	±25		V
I_D	Drain Current (continuous) at T_C = 25°C	18	18 (*)	A
I_D	Drain Current (continuous) at T_C = 100°C	11	11 (*)	A
I_DM (•)	Drain Current (pulsed)	72	72 (*)	A
P_TOT	Total Dissipation at T_C = 25°C	140	30	W
	Derating Factor	1.12	0.23	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	15		V/ns
Viso	Insulation Winthstand Voltage (DC)	--	2500	V
Tstg	Storage Temperature	–55 to 150		°C
Tj	Max. Operating Junction Temperature	150		°C

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) I_SD ≤ 18 A, di/dt ≤ 400 A/µs, V_DD =80% V_(BR)DSS

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PS2802-1-F3-A	5108	NEC	16+	SOP-4
PS2805C-1-F3-A	6468	RENESAS	16+	SOP-4
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PUMH10	21000	NXP	14+	SOT-363
PV0402AP	7660	I0R	15+	SOP-8
PVT312	6304	IOR	13+	DIP-6
PVT312L	5302	IOR	14+	SOP-6
PZT2222A	81000	FSC	13+	SOT-223
PZT2222AT1G	54000	ON	16+	SOT-223
PZTA42T1G	35000	ON	16+	SOT-223
PZTA92T1G	36000	ON	13+	SOT-223
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R2A15120FA	5054	RENESAS	14+	QFP48